High-Performance Drain-Offset a-IGZO Thin-Film Transistors

被引：52

作者：

Mativenga, Mallory ^{[1
]}

Choi, Min Hyuk ^{[1
]}

Kang, Dong Han ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期

关键词：

Amorphous indium-gallium-zinc-oxide (a-IGZO); gate-source capacitance (C-gd); kickback voltage; VOLTAGE;

D O I：

10.1109/LED.2011.2119290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from similar to 40 to 10 cm(2)/V . s by increasing the drain-offset length from 0 to 5 mu m, the threshold voltage (V-th) and swing (S) remain relatively independent of the offset length variation. Because of its high mobility even for large (5 mu m) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays.

引用

页码：644 / 646

页数：3

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