Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

被引：0

作者：

于广 ^{[1
,2
]}

武辰飞 ^{[1
,2
]}

陆海 ^{[1
,2
]}

任芳芳 ^{[1
,2
]}

张荣 ^{[1
,2
]}

郑有炓 ^{[1
,2
]}

黄晓明 ^{[3
]}

机构：

[1] Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University

[2] Collaborative Innovation Center of Advanced Microstructures,Nanjing University

[3] Peter Griinberg Research Center,Nanjing University of Posts and Telecommunications

来源：

Chinese Physics Letters | 2015年 / 04期

关键词：

Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors;

D O I：

暂无

中图分类号：

TN321.5 []; TN752 [振荡器];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 080904 ;

摘要：

Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates.The oscillator circuit consists of seven delay stages and an output buffer inverter.The element inverter exhibits a voltage gain higher than—6 V/V and a wide output swing close to 85%of the full swing range.The dynamic performance of the ring oscillators is evaluated as a function of supply voltage and at different gate lengths.A maximum oscillation frequency of 0.88 MHz is obtained for a supply voltage of 50 V,corresponding to a propagation delay of less than 85 us/stage.

引用

页码：101 / 104

页数：4

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