Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

被引：9

作者：

Yu Guang ^{[1
,2
,3
]}

Wu Chen-Fei ^{[1
,2
,3
]}

Lu Hai ^{[1
,2
,3
]}

Ren Fang-Fang ^{[1
,2
,3
]}

Zhang Rong ^{[1
,2
,3
]}

Zheng You-Dou ^{[1
,2
,3
]}

Huang Xiao-Ming ^{[4
]}

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[4] Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 04期

关键词：

AMORPHOUS OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; TEMPERATURE;

D O I：

10.1088/0256-307X/32/4/047302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates. The oscillator circuit consists of seven delay stages and an output buffer inverter. The element inverter exhibits a voltage gain higher than -6V/V and a wide output swing close to 85% of the full swing range. The dynamic performance of the ring oscillators is evaluated as a function of supply voltage and at different gate lengths. A maximum oscillation frequency of 0.88 MHz is obtained for a supply voltage of 50 V, corresponding to a propagation delay of less than 85 ns/stage.

引用

页数：4

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