High barrier metallic polymer p-type silicon Schottky diodes

被引：67
|
作者：
Onganer, Y [1 ]
Saglam, M [1 ]
Turut, A [1 ]
Efeoglu, H [1 ]
Tuzemen, S [1 ]
机构：
[1] ATATURK UNIV,FAC ARTS & SCI,DEPT PHYS,ERZURUM,TURKEY
来源：
SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 05期
关键词：
D O I：
10.1016/0038-1101(95)00158-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A metallic polypyrrole film has been formed on a p-type Si substrate by means of an anodization process. An investigation of the formed polymer/pSi Schottky diodes has been made. The polypyrrole polymer provides a good rectifying contact to the p-Si semiconductor. The current-voltage (barrier height Phi(b0) = 0.84 eV) and capacitance-voltage (Phi(b0) = 0.94 eV) characteristics of the devices are significantly improved with increasing Omega(b0) and decreasing the ideality factor (n - 1.20) after a polymer melt processing step. These values of Phi(b0) are significantly larger than those of conventional Schottky diodes. Furthermore this study shows that owing to its room temperature processing the high barrier-metallic polypyrrole/pSi structures can be useful for deep level characterisation of p-Si.
引用
收藏
页码：677 / 680
页数：4
相关论文
共 50 条
  • [11] The barrier height inhomogeneity in identically prepared Pb/p-type Si Schottky barrier diodes
    Nuhoglu, Ç
    Aydogan, S
    Türüt, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (07) : 642 - 646
  • [12] Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K
    Aoyama, Kohei
    Ueno, Kohei
    Kobayashi, Atsushi
    Fujioka, Hiroshi
    APPLIED PHYSICS LETTERS, 2022, 121 (23)
  • [13] SCHOTTKY BARRIERS ON P-TYPE SILICON
    SMITH, BL
    RHODERICK, EH
    SOLID-STATE ELECTRONICS, 1971, 14 (01) : 71 - +
  • [14] SCHOTTKY-BARRIER OF NONUNIFORM CONTACTS TO N-TYPE AND P-TYPE SILICON
    THOMPSON, RD
    TU, KN
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4285 - 4288
  • [15] Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes
    Kawano, Makoto
    Cunha, Carlos
    Hirama, Kazuyuki
    Kumakura, Kazuhide
    Taniyasu, Yoshitaka
    APPLIED PHYSICS LETTERS, 2025, 126 (01)
  • [16] EFFECTS OF HYDROGEN ON THE BARRIER HEIGHT OF A TITANIUM SCHOTTKY DIODE ON P-TYPE SILICON
    LIU, J
    ORTIZ, CR
    ZHANG, Y
    BAKHRU, H
    CORBETT, JW
    PHYSICAL REVIEW B, 1991, 44 (16): : 8918 - 8922
  • [17] High voltage Schottky barrier diodes on p-type 4H and 6H-SiC
    Raghunathan, R
    Baliga, BJ
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 933 - 936
  • [18] SCHOTTKY DIODES MADE OF COMPENSATED P-TYPE INP
    KOVALEVSKAYA, GG
    RUSSU, EV
    SLOBODCHIKOV, SV
    SMIRNOV, VG
    FETISOVA, VM
    FILARETOVA, GM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 374 - 376
  • [19] SCHOTTKY CONTACT OF GALLIUM ON P-TYPE SILICON
    Modi, B. P.
    Patel, K. D.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 684 - 690
  • [20] Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics
    Ueno, Kohei
    Shibahara, Keita
    Kobayashi, Atsushi
    Fujioka, Hiroshi
    APPLIED PHYSICS LETTERS, 2021, 118 (02)
12345