Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films

被引：63
|
作者：
Huang, Yanwei [1 ]
Li, Guifeng [1 ]
Feng, Jiahan [1 ]
Zhang, Qun [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Transparent conductive oxide (TCO); Tungsten-doped tin oxide; Thin films; Electrical and optical properties; THERMAL COLORATION; SNO2; ALPHA-AL2O3(0001); OXIDATION; STATES; PURE;
D O I：
10.1016/j.tsf.2009.07.119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tungsten-doped tin oxide (SnO2:W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 x 10(-4) Omega cm was obtained, with carrier mobility of 65 cm(2) V-1 s(-1) and carrier concentration of 1.44 x 10(20) cm(-3) in 3 wt.% tungsten-doping films annealed at 800 degrees C in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical hand gap ranging from 4.05 eV to 4.22 eV. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1892 / 1896
页数：5
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