Structural, electrical, and dielectric properties of sprayed tungsten-doped ZnO semiconductor

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作者
Zehar, Elhachemi [1 ]
Ouerdane, Abdallah [2 ]
Chetti, Boualem [2 ]
Dergal, Samiha [3 ,4 ]
Ouahrani, Tarik [4 ]
Çoruh, Ali [5 ]
Caudano, Yves [6 ]
机构
[1] Laboratory of Energy and Smart Systems, Faculty of Science and Technology, University of Khemis Miliana, 44225, Algeria
[2] University of Khemis Miliana, 44225, Algeria
[3] Hassiba Ben bouali University, Chlef,02000, Algeria
[4] Theoretical Physics Laboratory, Abou Bekr Belkaid University, Tlemcen,13000, Algeria
[5] Department of Physics, Kampus Sakarya, 54147, Turkey
[6] Laboratory Laser and Spectroscopy (LLS), Namur University, Belgium
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关键词
Activation energy - Capacitance - Crystal structure - Electric rectifiers - II-VI semiconductors - Magnetic semiconductors - Ohmic contacts - Oxide semiconductors - Permittivity - Semiconducting zinc compounds - Tungsten - Wide band gap semiconductors;
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页码:369 / 379
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