A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

被引：25
|
作者：
Liu, Jing [1 ]
Wang, Qin [1 ]
Long, Shibing [1 ]
Zhang, Manhong [1 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 05期
基金：
中国国家自然科学基金;
关键词：
FLOATING-GATE;
D O I：
10.1088/0268-1242/25/5/055013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report a metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure with a ZrO2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1 V under +/- 11 V capacitance-voltage sweep, and a greatly improved data retention (only 16% charge loss for 10 years time) along with good endurance. The MAZOS device has a strong potential for future high-performance non-volatile memory application.
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页数：4
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