Physical Analysis of Non-monotonic DIBL Dependence on Back Gate Bias in Thick Front Gate Oxide FDSOI MOSFETs

被引：1

作者：

Dabhi, Chetan Kumar ^{[1
]}

Kushwaha, Pragya ^{[2
]}

Agarwal, Harshit ^{[2
]}

Chauhan, Sarvesh S. ^{[1
]}

Hu, Chenming ^{[2
]}

Chauhan, Yogesh Singh ^{[1
]}

机构：

[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur, Uttar Pradesh, India

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

来源：

2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2019年

关键词：

Fully Depleted Silicon On Insulator; FDSOI; UTBSOI; DIBL; fringing field; threshold voltage;

D O I：

10.1109/S3S46989.2019.9320666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The non-monotonic DIBL behavior observed with variation in back gate voltage, in thick front gate oxide (FGOX) long channel FDSOI transistor is presented in this work. The physical origin of this behavior is the fringing field induced channel potential variation, from drain to drain side channel region, through thick FGOX for negative back bias, and through BOX for positive back bias. Additonally, we study the impact of channel length scaling on non-monotonic DIBL with variation in back gate voltage.

引用

页数：3

共 14 条

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