Heteroepitaxial growth of CeO2 thin film on Si(001) with an ultra thin YSZ buffer layer

被引：30
|
作者：
Wakiya, N [1 ]
Yamada, T [1 ]
Shinozaki, K [1 ]
Mizutani, N [1 ]
机构：
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
来源：
THIN SOLID FILMS | 2000年 / 371卷 / 1-2期
基金：
日本科学技术振兴机构;
关键词：
heteroepitaxial; Si; YSZ; CeO2; PLD; ultra thin buffer;
D O I：
10.1016/S0040-6090(00)01008-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of YSZ thickness on the epitaxial growth of CeO2 on Si(001) was investigated. The CeO2/YSZ/Si thin films were prepared by pulsed Laser deposition. The X-ray pole figure measurement revealed that heteroepitaxial growth of CeO2 is realized with a 0.5-nm-thick YSZ thin film which corresponds to one unit cell of YSZ. However, when the thickness of the YSZ thin film was 0.5 nm, traces of the CeO2(111) diffraction were also detected. The CeO2(111) diffraction was not detected for samples having more than 1.5 nm of YSZ thickness. Therefore 1.5 nm YSZ is enough to permit the complete epitaxial growth of CeO2 on Si(001). The effect of such ultra thin YSZ on the heteroepitaxial growth of CeO2 has not been reported thus far. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：211 / 217
页数：7
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