Growth of a NdBaCuO superconducting thin film on a MgO substrate by mist microwave-plasma chemical vapor deposition using a CeO2 buffer layer

被引：3

作者：

Takahashi, N ^{[1
]}

Takeda, N ^{[1
]}

Koukitu, A ^{[1
]}

Seki, H ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 184, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 4A期

关键词：

MPCVD; NdBaCuO; superconducting thin film; CeO2 buffer layer; MgO substrate; Tc-zero;

D O I：

10.1143/JJAP.37.L379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A NdBaCuO superconducting thin film was grown by mist microwave-plasma chemical vapor deposition (MPCVD) using a CeO2 buffer layer on a MgO(001) substrate. After the CeO2 buffer layer was deposited on the MgO(001) substrate at 1173 K by MPCVD, a NdBaCuO film was grown at 1223 K. The Tc-zero (zero resistance) value of the NdBaCuO film with the CeO2 buffer layer was 90.1 K; and it was about 10 K higher than that without the CeO2 buffer layer. The surface roughness of the NdBaCuO film was less than 5 nm.

引用

页码：L379 / L381

页数：3

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