Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor

被引：14
|
作者：
Zhao, Pei [1 ]
Huang, Zhiliang [1 ]
Mao, Yangwu [1 ]
Wang, Ying [1 ]
Takashi, Goto [2 ]
机构：
[1] Wuhan Inst Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
CERAMICS INTERNATIONAL | 2014年 / 40卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Laser chemical vapor deposition; CeO2; film; High depostion rate; DIOXIDE THIN-FILMS; YBA2CU3O7-X; GROWTH; ORIENTATION; MORPHOLOGY; SAPPHIRE;
D O I：
10.1016/j.ceramint.2014.07.120
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0 degrees of the omega-scan on the (200) reflection and that of 2.1 degrees of the phi-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 mu m h(-1). (C) 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/3.0/).
引用
收藏
页码：15919 / 15923
页数：5
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