Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor

被引：14

作者：

Zhao, Pei ^{[1
]}

Huang, Zhiliang ^{[1
]}

Mao, Yangwu ^{[1
]}

Wang, Ying ^{[1
]}

Takashi, Goto ^{[2
]}

机构：

[1] Wuhan Inst Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

CERAMICS INTERNATIONAL | 2014年 / 40卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Laser chemical vapor deposition; CeO2; film; High depostion rate; DIOXIDE THIN-FILMS; YBA2CU3O7-X; GROWTH; ORIENTATION; MORPHOLOGY; SAPPHIRE;

D O I：

10.1016/j.ceramint.2014.07.120

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0 degrees of the omega-scan on the (200) reflection and that of 2.1 degrees of the phi-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 mu m h(-1). (C) 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/3.0/).

引用

页码：15919 / 15923

页数：5

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