Deposition of highly oriented ZnS thin films on Si(100) substrate using electrostatic spray assisted vapor deposition

被引:0
|
作者
Wei, M [1 ]
Choy, KL [1 ]
机构
[1] Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
关键词
D O I
10.1002/1521-3862(20020116)8:1<15::AID-CVDE15>3.0.CO;2-F
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Highly oriented ZnS thin films have been deposited on Si (100) using a mixture of zinc chloride and thiourea as precursors and a simple and effective electrostatic spray assisted vapor deposition method. XRD analysis indicated that deposited films are highly 100 oriented in contrast to ZnS films deposited on glass substrates, which are known to have a preferred (111) orientation. HRTEM analysis showed the presence of an amorphous interface layer and high degree of orientation, which is attributed to the interaction of the charged precursor with the single crystal substrate under the high electric field.
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页码:15 / +
页数:4
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