Characterization of THz-induced bias voltage modulation in an STM

被引：0

作者：

Luo, Yang ^{[1
]}

Calzada, Jesus A. M. ^{[1
]}

Chen, Gong ^{[2
,3
,4
]}

Nguyen, Peter H. ^{[1
]}

Jelic, Vedran ^{[1
,5
]}

Liu, Yu-Jui Ray ^{[1
]}

Mildenberger, Daniel J. ^{[1
]}

Simpson, Howe R. J. ^{[1
]}

Hegmann, Frank A. ^{[1
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2E1, Canada

[2] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China

[3] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[4] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China

[5] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

来源：

2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2020年

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

D O I：

10.1109/IRMMW-THZ46771.2020.9370648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To understand and characterize the transient bias voltage induced by single-cycle terahertz (THz) pulses coupled to a scanning tunneling microscope (STM), the Bardeen tunneling model is applied to a 3-dimensional geometry of the STM junction. The simulated THz-induced tunneling current at the junction agrees well with that observed by THz-STM on a Cu(111) surface, providing a benchmark to quantify the THz-induced bias voltage at the tip-sample interface.

引用

页数：2

共 50 条

[41] Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope
Yamashita, M
Kiwa, T
Tonouchi, M
Nikawa, K
Otani, C
Kawase, K
[J]. CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2004, : 515 - 516
[42] The effect of bias voltage on the optical conductance of a single layer graphene p-n junction in THz regime
Al-Tikrity, Shareef F. Sultan
[J]. 2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2013,
[43] Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage
Shiota, Yoichi
Miwa, Shinji
Tamaru, Shingo
Nozaki, Takayuki
Kubota, Hitoshi
Fukushima, Akio
Suzuki, Yoshishige
Yuasa, Shinji
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2016, 400 : 159 - 162
[44] BIAS-DEPENDENT STM IMAGES OF OXYGEN-INDUCED STRUCTURES ON TI(0001) FACETS
BERNDT, R
GIMZEWSKI, JK
SCHLITTLER, RR
[J]. SURFACE SCIENCE, 1994, 310 (1-3) : 85 - 88
[45] Bias-voltage-induced asymmetry in nanoelectronic Y-branches
Worschech, L
Xu, HQ
Forchel, A
Samuelson, L
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3287 - 3289
[46] Bias voltage-dependent STM-tip-enhanced Raman spectroscopy of benzenethiol-modified gold nanoplates
Fujita, Yasuhiko
Horimoto, Noriko Nishizawa
Kajimoto, Shinji
Fukumura, Hiroshi
[J]. CHEMICAL PHYSICS LETTERS, 2013, 582 : 110 - 114
[47] Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs
Irokawa, Yoshihiro
Mitsuishi, Kazutaka
Izumi, Takatomi
Nishii, Junya
Nabatame, Toshihide
Koide, Yasuo
[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (05)
[48] Contrast distortion induced by modulation voltage in scanning capacitance microscopy
Chang, M. N.
Hu, C. W.
Chou, T. H.
Lee, Y. J.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (08)
[49] Polarization-sensitive Magnetic Field Induced Modulation of Broadband THz Pulses in Liquid
Shalaby, Mostafa
Peccianti, Marco
Ozturk, Yavuz
Razzari, Luca
Clerici, Matteo
Mazhorova, Anna
Skorobogatiy, Maksim
Ozaki, Tsuneyuki
Morandotti, Roberto
[J]. 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
[50] Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage
Clemente, Juan Antonio
Hubert, Guillaume
Franco, Francisco J.
Villa, Francesca
Baylac, Maud
Mecha, Hortensia
Puchner, Helmut
Velazco, Raoul
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (08) : 2188 - 2195

← 1 2 3 4 5 →