Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage

被引：15

作者：

Clemente, Juan Antonio ^{[1
]}

Hubert, Guillaume ^{[2
]}

Franco, Francisco J. ^{[3
]}

Villa, Francesca ^{[4
]}

Baylac, Maud ^{[4
]}

Mecha, Hortensia ^{[1
]}

Puchner, Helmut ^{[5
]}

Velazco, Raoul ^{[6
]}

机构：

[1] Univ Complutense Madrid, Fac Informat, Comp Architecture Dept, E-28040 Madrid, Spain

[2] ONERA French Aerosp Lab, F-31055 Toulouse, France

[3] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Aplicada 3, E-28040 Madrid, Spain

[4] Univ Grenoble Alpes, IN2P3, CNRS, Lab Phys Subat & Cosmol, F-38031 Grenoble, France

[5] Cypress Semicond Technol Res & Dev, San Jose, CA USA

[6] Univ Grenoble Alpes, Ctr Natl Rech Sci, TIMA, F-38031 Grenoble, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 08期

关键词：

Cots; low-bias voltage; neutron tests; radiation hardness; reliability; soft error; static random access memory (SRAM); SINGLE EVENT PHENOMENA; EXTENSIVE AIR-SHOWERS; ERROR FREE SRAM; ATMOSPHERIC RADIATION; SOLAR MODULATION; GEANT4; SIMULATIONS; MUSCA SEP3; UPSETS; PREDICTIONS; ALTITUDE;

D O I：

10.1109/TNS.2017.2682984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-the-shelf 90-nm static random access memories manufactured by Cypress Semiconductor, when biased at ultralow voltage. First, experiments exposing this memory at 14-MeV neutrons, when powering it up at bias voltages ranging from 0.5 to 3.3 V, are presented and discussed. These results are in good concordance with theoretical predictions issued by the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform. Then, this tool has been used to obtain soft error rate predictions at different altitudes above the Earth's surface of this device versus its bias voltage. Finally, the effect of contamination by alpha particles has also been estimated at said range of bias voltages.

引用

页码：2188 / 2195

页数：8

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