Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors

被引：19

作者：

Yoshida, Shotaro ^{[1
]}

Ikeyama, Kazuki ^{[1
]}

Yasuda, Toshiki ^{[1
]}

Furuta, Takashi ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

INGAN FILMS; GAN; PHOTOLUMINESCENCE; TRANSISTORS; CONSTANTS; MIRRORS; DIODES;

D O I：

10.7567/JJAP.55.05FD10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated electron and hole accumulations at GaN/AlInN/GaN interfaces by Hall effect measurement. The InN mole fraction and temperature dependences on the sheet carrier densities at the interfaces reveal that electrons and holes were induced by large positive and negative polarization charges to satisfy the charge neutrality conditions, respectively. On the basis of the above results, we then designed and demonstrated a low-resistity 10-pair Si-doped n-type AlInN/GaN distributed Bragg reflector (DBR) by using high Si doped and graded layers at the GaN/AlInN interfaces. The low-resistity n-type AlInN/GaN DBR will reduce the resistance and the internal loss in blue vertical-cavity surface emitting lasers. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

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