Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics

被引:26
|
作者
Bolshakov, Pavel [1 ]
Zhao, Peng [1 ]
Azcatl, Angelica [1 ]
Hurley, Paul K. [2 ]
Wallace, Robert M. [1 ]
Young, Chadwin D. [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA
[2] Univ Coll Cork, Tyndall Natl Inst, Lee Maltings Complex, Cork, Ireland
基金
美国国家科学基金会;
关键词
MoS2; Top-gated transistor; HfO2; Al2O3; High-k; Substrate; HIGH-PERFORMANCE; MOS2; HFO2;
D O I
10.1016/j.mee.2017.04.045
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially increased for devices on Al2O3 substrates, possibly due to substrate surface roughness. A forming gas anneal is found to enhance device performance due to a reduction in charge trap density of the high-k substrates. The major improvements in device performance are ascribed to the forming gas anneal. Top-gate devices built upon Al2O3 substrates exhibit a near-ideal subthreshold swing (SS) of-69 mV/dec and a -10x increase in field effect mobility, indicating a positive influence on top-gate device performance even without any backside bias. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:190 / 193
页数:4
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