Analysis and Design of Fully Integrated High-Power Parallel-Circuit Class-E CMOS Power Amplifiers

被引：29
|
作者：
Lee, Ockgoo [1 ]
An, Kyu Hwan [1 ]
Kim, Hyungwook [1 ]
Lee, Dong Ho [1 ]
Han, Jeonghu [1 ]
Yang, Ki Seok [2 ]
Lee, Chang-Ho [2 ]
Kim, Haksun [2 ]
Laskar, Joy [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Georgia Elect Design Ctr, Atlanta, GA 30308 USA
[2] Samsung Design Ctr, Atlanta, GA 30308 USA
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2010年 / 57卷 / 03期
关键词：
Breakdown; CMOS power amplifier (PA); parallel-circuit class-E PA; parallel combining; power loss; transformer; DISTRIBUTED ACTIVE-TRANSFORMER; FEED INDUCTANCE; RF; EFFICIENCY; COMBINER; LOSSES; PAE;
D O I：
10.1109/TCSI.2009.2023944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A design methodology for watt-level, fully integrated CMOS power amplifiers (PAs) is presented. It is based on the analysis of the operation and power loss mechanism of class-E PAs, which includes the effects of a finite dc-feed inductance and an impedance matching transformer. Using the proposed approach, a class-E PA with a 2 x 1:2 step-up on-chip transformer was implemented in a 0.18-mu m CMOS technology. With a 3.3 V supply, the fully integrated PA achieves an output power of 2 W and a power-added efficiency of 31% at 1.8 GHz.
引用
下载
收藏
页码：725 / 734
页数：10
相关论文
共 50 条
  • [31] Design and Optimization of High Efficiency GaN HEMT Class-E Power Amplifiers
    Filipek, Tomasz A.
    TENCON 2015 - 2015 IEEE REGION 10 CONFERENCE, 2015,
  • [32] Integrated 2.4 GHz class-E CMOS power amplifier
    Saari, V
    Juurakko, P
    Ryynänen, J
    Halonen, K
    2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2005, : 645 - 648
  • [33] A High-Efficiency Push-Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression
    Lu, Heng
    Jiang, Jianliang
    Zhang, Hengli
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024,
  • [34] A Fully Integrated CMOS Class-E Power Amplifier for Reconfigurable Transmitters with WCDMA/WiMAX applications
    Son, Hyuk Su
    Kim, Woo Young
    Jang, Joo Young
    Lee, Hae Jin
    Oh, Inn Yeal
    Park, Chul Soon
    2013 26TH INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2013 12TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS (VLSID), 2013, : 169 - 172
  • [35] Simplified Analysis and Design of Outphasing Transmitters Using Class-E Power Amplifiers
    Beltran, Ramon A.
    Raab, Frederick H.
    2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2015, : 16 - 18
  • [36] Investigation of High-Efficiency Parallel-Circuit Class-EF Power Amplifiers With Arbitrary Duty Cycles
    Liu, Chang
    Li, Xiang
    Zhao, Yulong
    Qi, Tian
    Du, Xuekun
    Chen, Wenhua
    Ghannouchi, Fadhel M.
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2021, 68 (06) : 5000 - 5012
  • [37] Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology
    Lin, WC
    Wu, TC
    Tsai, YH
    Du, LJ
    King, YC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1478 - 1483
  • [38] An exact analysis of Class-E power amplifiers for RF communications
    Klehn, BE
    Islam, SS
    2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 4, PROCEEDINGS, 2004, : 277 - 280
  • [39] Class-E and inverse class-E switch-mode power amplifiers
    Vasil'ev, A. V.
    Kozyrev, V. B.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2012, 57 (07) : 720 - 725
  • [40] Microwave class-E GaN power amplifiers
    Gao, S.
    Xu, H.
    Heikman, S.
    Mishra, U.
    York, R. A.
    2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, : 1035 - 1038
12345