A Fully Integrated CMOS Class-E Power Amplifier for Reconfigurable Transmitters with WCDMA/WiMAX applications

被引:5
|
作者
Son, Hyuk Su [1 ]
Kim, Woo Young [1 ]
Jang, Joo Young [1 ]
Lee, Hae Jin [1 ]
Oh, Inn Yeal [1 ]
Park, Chul Soon [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
关键词
class-E; CMOS; dual-band; hybrid-EER; power amplifier (PA); supply modulator; transformer; WCDMA; WiMAX; MULTIBAND;
D O I
10.1109/VLSID.2013.183
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a dual-band CMOS power amplifier (PA) using class-E topology for Wideband Code Division Multiple Access (WCDMA) at 1.9 GHz and Worldwide Interoperability for Microwave Access (WiMAX) at 2.6 GHz applications. The fully integrated PA consists of an input balun, a driver stage, a power stage, and two output transformers. To operate the dual-band PA, common-gate amplifiers having on-off apparatuses in power stage and matched transformers for 1.9/2.6 GHz are employed. The PA is designed and fabricated in a 0.18-mu m CMOS technology and has a chip size of 1.5 x 1.85 mm(2) including all pads. When driven by continuous wave (CW) signals, the output power and the efficiency reach 28.1/27.4 dBm and 37.8/31.6% at 1.9 GHz and 2.6 GHz, respectively. The average output powers of the hybrid-EER based TX system 21 dBm for 3.84 MHz WCDMA and 12 dBm for 5 MHz WiMAX, while also meeting stringent linearity specifications without using any linearization methods.
引用
收藏
页码:169 / 172
页数:4
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