Electrical properties of undoped high-resistivity n-CdTe polycrystals

被引：1
|
作者：
Klevkov, Yu. V. [1 ]
Kolosov, S. A. [1 ]
Plotnikov, A. F. [1 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782607060061
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only partly be understood in terms of the commonly accepted concepts.
引用
收藏
页码：651 / 654
页数：4
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