Physical properties of the heterojunctionx/n-CdTe as a function of the parameters of CdTe crystals

被引：0
|
作者：
Mostovyi, Andrii I. [1 ,2 ]
Solovan, Mykhailo M. [1 ]
Brus, Viktor V. [1 ,3 ]
Pullerits, Tonu [2 ]
Maryanchuk, Pavlo D. [1 ]
机构：
[1] Chernivtsi Natl Univ, Dept Elect & Energy Engn, Kotsubinsky Str 2, UA-58012 Chernovtsy, Ukraine
[2] Lund Univ, Dept Chem Phys, Box 124, S-22100 Lund, Sweden
[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silicon Photovolta, D-12489 Berlin, Germany
来源：
THIRTEENTH INTERNATIONAL CONFERENCE ON CORRELATION OPTICS | 2017年 / 10612卷
关键词：
Physical properties; MoO; CdTe; ohmic contacts; heterojunction; current transport mechanisms; SOLAR-CELLS; ELECTRICAL-PROPERTIES; SURFACE; FILMS;
D O I：
10.1117/12.2304915
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (rho(1)=0.4 Omega.cm, rho(2)=10 Omega.cm, rho(3)= 40 Omega.cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.
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页数：6
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