New driver for high-efficiency switching RF power amplifiers

被引：1
|
作者：
Ortega-González, FJ [1 ]
机构：
[1] Univ Politecn Madrid, EUIT Telecomunicac, Radio Engn Grp, Madrid 28031, Spain
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2004年 / 43卷 / 05期
关键词：
high efficiency; power amplifier; class E; class D; driver;
D O I：
10.1002/mop.20472
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a new driver circuit for high-efficiency RF switching power amplifiers (class E, class D) based on a small-area driver transistor, intrinsic input capacitances of the output-power transistor, and a shaping network. The driver operation is based on class-E principles. Among the main benefits of this new driver are high efficiency, very low-bias voltage, and circuit simplicity. (C) 2004 Wiley Periodicals, Inc.
引用
收藏
页码：370 / 372
页数：3
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