New driver for high-efficiency switching RF power amplifiers

被引：1

作者：

Ortega-González, FJ ^{[1
]}

机构：

[1] Univ Politecn Madrid, EUIT Telecomunicac, Radio Engn Grp, Madrid 28031, Spain

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2004年 / 43卷 / 05期

关键词：

high efficiency; power amplifier; class E; class D; driver;

D O I：

10.1002/mop.20472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new driver circuit for high-efficiency RF switching power amplifiers (class E, class D) based on a small-area driver transistor, intrinsic input capacitances of the output-power transistor, and a shaping network. The driver operation is based on class-E principles. Among the main benefits of this new driver are high efficiency, very low-bias voltage, and circuit simplicity. (C) 2004 Wiley Periodicals, Inc.

引用

页码：370 / 372

页数：3

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