The effect of temperature on the reliability of RF LDMOS power compounds

被引：0
|
作者：
Gares, Mohamed [1 ]
机构：
[1] IUT, LEMI, Rouen, France
来源：
2006 Canadian Conference on Electrical and Computer Engineering, Vols 1-5 | 2006年
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
引用
收藏
页码：585 / 588
页数：4
相关论文
共 50 条
  • [1] Intrinsic Reliability of RF Power LDMOS FETs
    Burdeaux, David C.
    Burger, Wayne R.
    2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,
  • [2] Effect of temperature on high-power RF LDMOS transistors
    Lembeye, Olivier
    Nanan, Jean-Christophe
    Applied Microwave and Wireless, 2002, 14 (08): : 36 - 43
  • [3] Reliability study of power RF LDMOS for radar application
    Maanane, H
    Bertram, P
    Marcon, J
    Masmoudi, M
    Belaid, M
    Mourgues, K
    Eudeline, P
    Ketata, K
    MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) : 1449 - 1454
  • [4] Effect of Drift Region Resistance on Temperature Characteristics of RF Power LDMOS Transistors
    Chen, Kun-Ming
    Chen, Bo-Yuan
    Chen, Hsueh-Wei
    Chiu, Chia-Sung
    Huang, Guo-Wei
    Chang, Chia-Hao
    Hu, Hsin-Hui
    2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 443 - 446
  • [5] Comparative analysis of accelerated ageing effects on power RF LDMOS reliability
    Belaïd, MA
    Ketata, K
    Mourgues, K
    Maanane, H
    Masmoudi, M
    Marcon, J
    MICROELECTRONICS RELIABILITY, 2005, 45 (9-11) : 1732 - 1737
  • [6] Hot-Carrier Effects on Power RF LDMOS Device Reliability
    Belaid, M. A.
    Ketata, K.
    14TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATION OF ICS AND SYSTEMS, 2008, : 123 - 127
  • [7] Reliability study of power RF LDMOS device under thermal stress
    Belaid, M. A.
    Ketata, K.
    Mourgues, K.
    Gares, M.
    Masmoudi, M.
    Marcon, J.
    MICROELECTRONICS JOURNAL, 2007, 38 (02) : 164 - 170
  • [8] Study of hot-carrier effects on power RF LDMOS device reliability
    Gares, M.
    Belaid, M. A.
    Maanane, H.
    Masmoudi, M.
    Marcon, J.
    Mourgues, K.
    Eudeline, Ph.
    MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1394 - 1399
  • [9] Analysis of impact ionization on RF power LDMOS reliability under RF life test in radar system
    Belaid, M. A.
    MICROELECTRONICS RELIABILITY, 2022, 138
  • [10] LDMOS Technology for RF Power Amplifiers
    Theeuwen, S. J. C. H.
    Qureshi, J. H.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) : 1755 - 1763
12345