The effect of temperature on the reliability of RF LDMOS power compounds

被引：0
|
作者：
Gares, Mohamed [1 ]
机构：
[1] IUT, LEMI, Rouen, France
来源：
2006 Canadian Conference on Electrical and Computer Engineering, Vols 1-5 | 2006年
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
引用
收藏
页码：585 / 588
页数：4
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