Effect of temperature on high-power RF LDMOS transistors

被引：0
|
作者：
Lembeye, Olivier [1 ]
Nanan, Jean-Christophe [1 ]
机构：
[1] Motorola SPS, Toulouse, France
来源：
Applied Microwave and Wireless | 2002年 / 14卷 / 08期
关键词：
Cellular radio systems - Computer aided design - Computer simulation - Current voltage characteristics - Electric conductance - Electric currents - Electromigration - Electron mobility - Global system for mobile communications - Heat losses - MOS devices - Power amplifiers - Power control - Semiconductor device models - Thermal effects - Transconductance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The thermal characteristics of the laterally diffused metal oxide semiconductor (LDMOS) transistors were discussed. The effect of the temperature on the different direct current (DC) parameters, capacitances, and the correlations between power capability, efficiency and linearity were analyzed. The analysis was helpful in device selection according to specifications and was confirmed with computer aided design (CAD) tools. The transistors have applications in power amplifiers for cellular radio systems and global system for mobile communications (GSM) systems.
引用
收藏
页码：36 / 43
相关论文
共 50 条
  • [1] A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
    Everett, John P.
    Kearney, Michael J.
    Rueda, Hernan
    Johnson, Eric M.
    Aaen, Peter H.
    Wood, John
    Snowden, Christopher M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 3081 - 3088
  • [2] A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors
    Wood, John
    Aaen, Peter H.
    Bridges, Daren
    Lamey, Dan
    Guyonnet, Michael
    Chan, Daniel S.
    Monsauret, Nelsy
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (02) : 282 - 292
  • [3] Effect of Drift Region Resistance on Temperature Characteristics of RF Power LDMOS Transistors
    Chen, Kun-Ming
    Chen, Bo-Yuan
    Chen, Hsueh-Wei
    Chiu, Chia-Sung
    Huang, Guo-Wei
    Chang, Chia-Hao
    Hu, Hsin-Hui
    2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 443 - 446
  • [4] Distributed effects in high power RF LDMOS transistors
    Goverdhanam, K
    Dai, WH
    Frei, M
    Farrell, D
    Bude, J
    Safar, H
    Mastrapasqua, M
    Bambridge, T
    2005 IEEE MTT-S International Microwave Symposium, Vols 1-4, 2005, : 827 - 830
  • [5] High power RF LDMOS transistors for avionics applications
    Mollee, Hans
    O'Shea, Steven
    Wilson, Paul
    Vennema, Korne
    1600, Horizon House, Norwood, MA, United States (43):
  • [6] On the Modeling of LDMOS RF Power Transistors
    Wood, John
    Aaen, Peter H.
    IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010, 2010,
  • [7] Nonlinear modeling of LDMOS transistors for high-power FM transmitters
    Bosi, Gianni
    Crupi, Giovanni
    Vadala, Valeria
    Raffo, Antonio
    Giovannelli, Antonello
    Vannini, Giorgio
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2014, 27 (5-6) : 780 - 791
  • [8] RF POWER TRANSISTORS CATAPULT INTO HIGH-POWER SYSTEMS
    DYE, NE
    SCHNELL, D
    MICROWAVES & RF, 1987, 26 (03) : 344 - 351
  • [9] The effect of temperature on the reliability of RF LDMOS power compounds
    Gares, Mohamed
    2006 Canadian Conference on Electrical and Computer Engineering, Vols 1-5, 2006, : 585 - 588
  • [10] Recent Advances in RF-LDMOS High-Power IC Development
    Burger, Wayne R.
    2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, : 35 - 38
12345