Effect of temperature on high-power RF LDMOS transistors

被引：0

作者：

Lembeye, Olivier ^{[1
]}

Nanan, Jean-Christophe ^{[1
]}

机构：

[1] Motorola SPS, Toulouse, France

来源：

Applied Microwave and Wireless | 2002年 / 14卷 / 08期

关键词：

Cellular radio systems - Computer aided design - Computer simulation - Current voltage characteristics - Electric conductance - Electric currents - Electromigration - Electron mobility - Global system for mobile communications - Heat losses - MOS devices - Power amplifiers - Power control - Semiconductor device models - Thermal effects - Transconductance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The thermal characteristics of the laterally diffused metal oxide semiconductor (LDMOS) transistors were discussed. The effect of the temperature on the different direct current (DC) parameters, capacitances, and the correlations between power capability, efficiency and linearity were analyzed. The analysis was helpful in device selection according to specifications and was confirmed with computer aided design (CAD) tools. The transistors have applications in power amplifiers for cellular radio systems and global system for mobile communications (GSM) systems.

引用

页码：36 / 43

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