On the intrinsic origin of 1/f noise

被引:27
|
作者
Kaulakys, B
机构
[1] Inst Theoret Phys & Astrophys, LT-2600 Vilnius, Lithuania
[2] Vilnius State Univ, Dept Phys, LT-2040 Vilnius, Lithuania
关键词
Long-memory process;
D O I
10.1016/S0026-2714(00)00055-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The problem of the intrinsic origin of 1/f noise is considered. Currents and signals consisting of a sequence of pulses are analyzed. It is shown that the intrinsic origin of 1/f noise is a random walk of the average time between subsequent pulses of the pulse sequence, or the interevent time. This results in the long-memory process for the pulse occurrence time and in 1/f type power spectrum of the signal. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1787 / 1790
页数:4
相关论文
共 50 条
  • [21] ORIGIN OF 1-F NOISE IN BIPOLAR-TRANSISTORS
    STOISIEK, M
    WOLF, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1753 - 1757
  • [22] DETERMINISTIC ORIGIN OF 1/F NOISE IN MAGNETIC-RESONANCE
    WARDEN, M
    PHYSICAL REVIEW E, 1993, 48 (02): : R639 - R642
  • [23] On the origin of 1/f noise in polysilicon emitter bipolar transistors
    Deen, MJ
    Rumyantsev, SL
    Schroter, M
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 1192 - 1195
  • [24] 1-F NOISE IN THERMO EMF OF INTRINSIC AND EXTRINSIC SEMICONDUCTORS
    KLEINPENNING, TG
    PHYSICA, 1974, 77 (01): : 78 - 98
  • [25] Origin of 1/f Noise - Active Degradation Generating Entropy
    Feinberg, Alec
    2020 ANNUAL RELIABILITY AND MAINTAINABILITY SYMPOSIUM (RAMS 2020), 2020,
  • [26] Exploration of 1/f noise origin using time measurements
    Ghosh, S.
    Sthal, F.
    Devel, M.
    Cabodevila, G.
    Imbaud, J.
    Bourquin, R.
    Abbe, P.
    Vernier, D.
    Bakir, A.
    Cibiel, G.
    2014 European Frequency and Time Forum (EFTF), 2014, : 363 - 366
  • [27] Origin of 1/f-noise in nonequilibrium phase transition
    Koverda, VP
    Skokov, VN
    Skripov, VP
    DOKLADY AKADEMII NAUK, 1997, 356 (05) : 614 - 616
  • [28] Origin of 1/f noise in InAlAs/InGaAs HEMT's
    Mihaila, M
    Heedt, C
    Scheffer, F
    Tegude, FJ
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 368 - 371
  • [29] Origin of 1/f noise in lateral PNP bipolar transistors
    Zhao, E
    Çelik-Butler, Z
    Thiel, F
    Dutta, R
    MICROELECTRONICS RELIABILITY, 2004, 44 (01) : 89 - 94
  • [30] Experimental study on 1/f intrinsic thermal noise in optical fibers
    Huang Jun-Chao
    Wang Ling-Ke
    Duan Yi-Fei
    Huang Ya-Feng
    Liu Liang
    Li Tang
    ACTA PHYSICA SINICA, 2019, 68 (05)