Effect of low level O2 addition to N2 on surface cleaning by nonequilibrium atmospheric-pressure pulsed remote plasma

被引：17

作者：

Iwasaki, Masahiro

Takeda, Keigo

Ito, Masafumi

Yara, Takuya

Uehara, Tsuyoshi

Hori, Masaru

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Wakayama Univ, Fac Syst Engn, Dept Optomechatron, Wakayama 6408510, Japan

[3] Sekisui Chem Co Ltd, Tsukuba, Ibaraki 3004292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 20-24期

关键词：

indium tin oxide; plasma cleaning process; oxygen radical; atmospheric-pressure plasma; large area process; pulsed plasma; low gas temperature; nonequilibrium plasma; O-2/N-2;

D O I：

10.1143/JJAP.46.L540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect Of 02 additions below 0.2% to N-2 was investigated for the cleaning of organic contaminants on an indium tin oxide film using a nonequilibrium atmospheric -pressure pulsed plasma. A remarkably high cleaning efficiency was obtained for plasma treatment with additions from 0.025 to 0,1% 02 to N-2. The concentration of the ground state oxygen radical [O((3)p)] was measured using vacuum UV laser absorption spectroscopy. It was found that the key factor for the surface cleaning was the scission of carbon bonds due to UV emissions, and subsequent oxidation due to O(P-3) and ozone.

引用

页码：L540 / L542

页数：3

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