Effect of Electrode-Thickness on Electrical Properties of Organic-Thin-Film-Transistors

In this paper the impact of the source/drain (S/D) electrode on performance parameters of the organic-material based transistor is discussed using the 2-D numerical-device Atlas simulator. Additionally, the performance-parameter and the electrical-characteristics of transistor is evaluated in terms of the drive-current, mobility and current on-off-ratio. Furthermore, thickness of source/drain electrode is varied to analyze the impact on performance parameters of the transistor in the range of infinitesimal-thickness to 40 nm with 10 nm step size in both the configurations, bottom-gate with contact electrodes at bottom and top-configurations. These configurations are also termed as planar and staggered-OTFT configurations, respectively. On the basis of result analysis, it is found that BGBC configuration have lower drive current in comparison to bottom gate top contact configuration because of larger barrier heights. Subsequently, it is also analyze that BGBC configuration has more impact on their performance parameters in comparison to BGTC configuration with variation in electrode thickness. At the outset, it is observe that thickness of source-drain electrodes has the significant impact on the device performance, therefore, due consideration is needed during performance analysis and actual fabrication of the organic material based transistors.