Sb/Cu(111): Growth, dissolution and segregation studied by AES, LEED and PES

被引：7

作者：

Gothelid, M

Aufray, B

Giordano, H

Gay, JM

Le Lay, G

Belkhou, R

Marsot, N

Guillot, C

机构：

[1] CNRS, CRMC2, F-13288 Marseille 9, France

[2] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

[3] Univ Aix Marseille 1, UFR Sci Mat, Marseille, France

来源：

SURFACE REVIEW AND LETTERS | 1997年 / 4卷 / 06期

关键词：

D O I：

10.1142/S0218625X97001541

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The room temperature deposition of Sb on to Cu(111) gives rise to two different Sb states as seen from the Sb 4d shallow core level: an adstate similar to the (root 3 x root 3)R30 degrees structure formed after annealing at 400 degrees C, and an overlayer of unreacted Sb. The unreacted Sb overlayer is rapidly dissolved into a subsurface position in the crystal during annealing, where it forms a quasistable structure which is dissolved very slowly.

引用

页码：1203 / 1207

页数：5

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