PHOTOCHEMICAL DECOMPOSITION OF TRIETHYLGALLIUM ON SI(111) STUDIED BY MEANS OF STM, LEED, AES AND MASS-SPECTROSCOPY

被引：3
|
作者：
INUKAI, J
MIZUTANI, W
FUKUI, K
SHIMIZU, H
IWASAWA, Y
机构：
[1] UNIV TOKYO,FAC SCI,DEPT CHEM,BUNKYO KU,TOKYO 113,JAPAN
[2] ELECTROTECH LAB,SURFACE ENGN SECT,TSUKUBA,IBARAKI 305,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 04期
关键词：
SURFACE PHOTOCHEMICAL DECOMPOSITION; GA(C2H5)3; SI(111); UV LIGHT; LEED; AES; STM; MASS SPECTROSCOPY;
D O I：
10.1143/JJAP.32.1768
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Adsorption and photochemical decomposition of triethylgallium [Ga(C2H5)3] on Si(111) at room temperature were investigated by means of low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunneling microscopy (STM) and mass spectroscopy (MS). Ga(C2H5)3 was adsorbed on Si(111) until its saturation, at which point LEED and STM indicated disordered adsorption of the molecules. Irradiation of ultraviolet light onto the Ga(C2H5)3-saturated surface caused carbon incorporation contrary to the case of pyrolysis. Ethyl species were proposed to result from the photon absorption processes of the molecules.
引用
收藏
页码：1768 / 1771
页数：4
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