DEPOSITION OF CEO2 ON SI(111) STUDIED BY LEED, AES, XPS AND RBS

被引：14

作者：

GUILLAUME, CE ^{[1
]}

VERMEERSCH, M ^{[1
]}

SPORKEN, R ^{[1
]}

VERBIST, JJ ^{[1
]}

MATHOT, S ^{[1
]}

DEMORTIER, G ^{[1
]}

机构：

[1] FAC UNIV NOTRE DAME PAIX,INST STUDIES INTERFACE SCI,ANAL REACT NUCL LAB,B-5000 NAMUR,BELGIUM

来源：

SURFACE AND INTERFACE ANALYSIS | 1994年 / 22卷 / 1-12期

关键词：

D O I：

10.1002/sia.740220141

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The deposition of CeO2 on Si(111) has been studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). LEED shows the CeO2 layer to grow in the (111) orientation. The formation of a silicon oxide layer at the interface is observed. The thickness of this oxide layer is found to vary between about 1 and 8 nm, depending on the thickness of the CeO2 layer. A model for the growth of CeO2 and for the formation of the silicon oxide layer at the interface is proposed.

引用

页码：186 / 189

页数：4

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