Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

被引：1
|
作者：
Yan, BP [1 ]
Hsu, CC [1 ]
Wang, XQ [1 ]
Yang, ES [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 19期
关键词：
D O I：
10.1063/1.1819505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities >10 A/cm(2), indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. (C) 2004 American Institute of Physics.
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页码：4505 / 4507
页数：3
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