Electronic density of states at the ultrathin SiO2/Si interfaces

被引：0
|
作者：
Hirose, M [1 ]
Alay, JL [1 ]
Yoshida, T [1 ]
Miyazaki, S [1 ]
机构：
[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 739, Japan
来源：
PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 | 1996年 / 96卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：485 / 496
页数：12
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