Irradiation effects in ultrathin Si/SiO2 structures

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Universites Paris, Paris, France [1 ]
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来源：
IEEE Trans Nucl Sci | / 3 pt 3卷 / 1407-1411期
关键词：
Dosimetry - Electron spin resonance spectroscopy - Irradiation - Oxides - Passivation - Porous silicon - Semiconducting silicon compounds - Semiconductor device structures - Semiconductor growth - Substrates - Ultrathin films;
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摘要：
The total dose response of Si/SiO2 structures with ultrathin (20-40 angstrom) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.
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