High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography

Laterally complex coupled distributed feedback lasers have been fabricated by focused-ion-beam lithography on completely grown InGaAsP/InP laser structures emitting at 1.55 mu m. The grating definition is based on implantation-enhanced quantum-well intermixing and wet chemical etching and allows the fabrication of complex coupled antiphase gratings without any further overgrowth step. Side-mode suppression ratios of 45 dB and bandwidths for direct modulation beyond 13 GHz were obtained for 300-mu m-long devices. The lasers exhibit frequency-modulation response values lower than 200 MHz/mA and feature a low sensitivity to back-reflected light. Preliminary lifetime measurements over 7000 h continuous-wave operation at room temperature show no significant indication for long-time degradation. (C) 2000 American Institute of Physics. [S0003-6951(00)03729-3].