High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography

被引：16
|
作者：
Rennon, S [1 ]
Bach, L
Reithmaier, JP
Forchel, A
Gentner, JL
Goldstein, L
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Alcatel Alsthom Rech, Corp Res Ctr, OPTO, Grp Interet Econ, F-91460 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期
关键词：
D O I：
10.1063/1.126965
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Laterally complex coupled distributed feedback lasers have been fabricated by focused-ion-beam lithography on completely grown InGaAsP/InP laser structures emitting at 1.55 mu m. The grating definition is based on implantation-enhanced quantum-well intermixing and wet chemical etching and allows the fabrication of complex coupled antiphase gratings without any further overgrowth step. Side-mode suppression ratios of 45 dB and bandwidths for direct modulation beyond 13 GHz were obtained for 300-mu m-long devices. The lasers exhibit frequency-modulation response values lower than 200 MHz/mA and feature a low sensitivity to back-reflected light. Preliminary lifetime measurements over 7000 h continuous-wave operation at room temperature show no significant indication for long-time degradation. (C) 2000 American Institute of Physics. [S0003-6951(00)03729-3].
引用
收藏
页码：325 / 327
页数：3
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