Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes

被引：0
|
作者：
Swathi, S. K. [1 ]
Ranjith, K. [1 ]
Ramamurthy, Praveen C. [1 ]
机构：
[1] Indian Inst Sci, Dept Mat Engn, Bangalore, Karnataka, India
来源：
2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年
关键词：
Scanning tunneling microscopy; Mobility; Energy band; Turn on voltage; Polymer diode;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4x10-6 m(2)/V. s, which is relatively high for a polymer material.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] High-Efficiency, Low Turn-on Voltage Blue-Violet Quantum-Dot-Based Light-Emitting Diodes
    Shen, Huaibin
    Cao, Weiran
    Shewmon, Nathan T.
    Yang, Chenchen
    Li, Lin Song
    Xue, Jiangeng
    NANO LETTERS, 2015, 15 (02) : 1211 - 1216
  • [32] Fabrication and characterization of low turn-on voltage carbon nanotube field emission triodes
    Cheng, HC
    Chen, KJ
    Hong, WK
    Tantair, FG
    Lin, CP
    Chen, KH
    Chen, LC
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (08) : H15 - H17
  • [33] Low turn-on voltage and high isolation RF MEMS switches for coding metamaterial
    Lin M.
    Chen B.
    Long S.
    Yuan B.
    Guo Z.
    Ding H.
    Zha S.
    Wu X.
    Zhongguo Kexue Jishu Kexue/Scientia Sinica Technologica, 2023, 53 (08): : 1411 - 1418
  • [34] Diamond field emission triode with low gate turn-on voltage and high gain
    Wisitsora-At, A
    Kang, WP
    Davidson, JL
    Kerns, DV
    Fisher, T
    IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE, 2001, : 285 - 286
  • [35] GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage
    Lew, K. L.
    Yoon, S. F.
    Wang, H.
    Wicaksono, S.
    Gupta, J. A.
    McAlister, S. P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1308 - 1310
  • [36] Low optical turn-on voltage in solution processed hybrid light emitting transistor
    Ablat, Abduleziz
    Kyndiah, Adrica
    Bachelet, Alexandre
    Takimiya, Kazuo
    Hirsch, Lionel
    Fasquel, Sophie
    Abbas, Mamatimin
    APPLIED PHYSICS LETTERS, 2019, 115 (02)
  • [37] Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode
    Chang, Ting-Fu
    Huang, Chih-Fang
    Yang, Tsung-Yu
    Chiu, Chien-Wei
    Huang, Tsung-Yi
    Lee, Kung-Yen
    Zhao, Feng
    SOLID-STATE ELECTRONICS, 2015, 105 : 12 - 15
  • [38] Low turn-on voltage silicon field emitter arrays with atomically sharp tips
    Ding, M
    Akintunde, AI
    IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE, 2001, : 113 - 114
  • [39] Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
    Yan, BP
    Hsu, CC
    Wang, XQ
    Yang, ES
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 170 - 172
  • [40] Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base
    Oka, T
    Mishima, T
    Kudo, M
    APPLIED PHYSICS LETTERS, 2001, 78 (04) : 483 - 485
12345