Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base

被引：22

作者：

Oka, T ^{[1
]}

Mishima, T ^{[1
]}

Kudo, M ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1343853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed GaAs heterojunction bipolar transistors (HBTs) with low turn-on voltage by using pseudomorphic GaAsSb as the base layer. The turn-on voltage of GaAs/GaAs0.91Sb0.09 HBT is 0.10 V lower than that of InGaP/GaAs HBT. The lower turn-on voltage is attributed to the smaller band gap of the GaAsSb base layer, indicating that GaAsSb is useful material for reducing turn-on voltage of GaAs HBTs. The current gain of 20 is obtained for GaAs/GaAs0.91Sb0.09 HBT, which is larger than those of previously reported GaAs/GaAsSb HBTs owing to the pseudomorphic, fully strained GaAsSb with no misfit dislocations. The knee voltage of 0.47 V is attained at the collector current density of 5x10(4) A/cm(2). These results indicate that GaAs/GaAsSb HBTs have a great potential for reducing operating voltage and power dissipation. (C) 2001 American Institute of Physics.

引用

页码：483 / 485

页数：3

共 50 条

[1] GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage
Lew, K. L.
Yoon, S. F.
Wang, H.
Wicaksono, S.
Gupta, J. A.
McAlister, S. P.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1308 - 1310
[2] Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base
Tian, Y
Wang, H
MICROELECTRONICS JOURNAL, 2006, 37 (01) : 38 - 43
[3] High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage
Chang, PC
Monier, C
Baca, AG
Li, NY
Newman, F
Armour, E
Hou, HQ
SOLID-STATE ELECTRONICS, 2002, 46 (04) : 581 - 584
[4] 112-GHz collector-up Ge/GaAs heterojunction bipolar transistors with low turn-on voltage
Kawanaka, M
Iguchi, N
Sone, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (05) : 670 - 675
[5] High-gain low turn-on voltage AlGaAs/GaAsNSb/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy
Lew, K. L.
Yoon, S. F.
Wang, H.
Wicaksono, S.
Gupta, J. A.
McAlister, S. P.
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) : 1083 - 1085
[6] Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 170 - 172
[7] LOW TURN-ON VOLTAGE OPERATION OF COLLECTOR-UP GE/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH F(MAX)=112 GHZ
KAWANAKA, M
IGUCHI, N
SONE, J
NEC RESEARCH & DEVELOPMENT, 1995, 36 (01): : 165 - 172
[8] Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
Tan, Shih-Wei
Lai, Shih-Wen
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2012, 2012
[9] GAASSB FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
IKOSSIANASTASIOU, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) : 878 - 884
[10] Reduction in turn-on voltage in GaInNAs and InGaAs-based double-heterojunction bipolar transistors
Wu, CH
Su, YK
Wei, SC
Chang, SJ
Sio, CC
Chen, WC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (4B): : 1919 - 1921

← 1 2 3 4 5 →