Effects of post-annealing and temperature/humidity treatments on the interfacial adhesion energy of the Cu/SiNx interface for Cu interconnects

被引：4

作者：

Jeong, Minsu ^{[1
]}

Bae, Byung-Hyun ^{[1
]}

Lee, Hyeonchul ^{[1
]}

Kang, Hee-Oh ^{[2
]}

Hwang, Wook-Jung ^{[2
]}

Yang, Jun-Mo ^{[2
]}

Park, Young-Bae ^{[1
]}

机构：

[1] Andong Natl Univ, Sch Mat Sci & Engn, Andong 36729, Gyeongbuk, South Korea

[2] Natl Nanofab Ctr, Daejeon 34141, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

DAMASCENE CU; THIN-FILMS; ELECTROMIGRATION; GROWTH; RELIABILITY; OXIDATION; LAYER; TSV;

D O I：

10.7567/JJAP.55.06JD01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of 200 degrees C post-annealing and 85 degrees C and 85% relative humidity temperature and humidity (T/H) treatments on the interfacial adhesion energy of a Cu/SiNx interface were systematically investigated. The results of a four-point bending test, X-ray photoemission spectroscopy, and high-resolution transmission electron microscopy revealed that the interfacial adhesion energy during T/H treatment decreased with time faster than during annealing treatment, which is closely related to the faster Cu oxidation of SiNx/Cu interfaces. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

共 40 条

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