(CdTe)1-x(In2Te3)x pseudo-binary in polycrystalline CdTe-In films

被引：0
|
作者：
Castro-Rodríguez, R [1 ]
Hernández, MP
Zapata-Torres, M
Peña, JL
机构：
[1] IPN, CINVESTAV, Dept Appl Phys, Merida 97310, Yucatan, Mexico
[2] Univ La Havana, IMRE, La Habana 10400, Cuba
[3] IPN, ALTAMIRA, CICATA, Altamira 89600, Spain
来源：
THIN SOLID FILMS | 2000年 / 373卷 / 1-2期
关键词：
cadmium telluride; evaporation; lattice parameters; physical vapor; semiconductors; X-ray diffraction;
D O I：
10.1016/S0040-6090(00)01084-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (alpha -phase) in all films, together with the CdIn2Te4 (beta -phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：23 / 27
页数：5
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