(CdTe)1-x(In2Te3)x pseudo-binary in polycrystalline CdTe-In films

被引：0

作者：

Castro-Rodríguez, R ^{[1
]}

Hernández, MP

Zapata-Torres, M

Peña, JL

机构：

[1] IPN, CINVESTAV, Dept Appl Phys, Merida 97310, Yucatan, Mexico

[2] Univ La Havana, IMRE, La Habana 10400, Cuba

[3] IPN, ALTAMIRA, CICATA, Altamira 89600, Spain

来源：

THIN SOLID FILMS | 2000年 / 373卷 / 1-2期

关键词：

cadmium telluride; evaporation; lattice parameters; physical vapor; semiconductors; X-ray diffraction;

D O I：

10.1016/S0040-6090(00)01084-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (alpha -phase) in all films, together with the CdIn2Te4 (beta -phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：23 / 27

页数：5

共 50 条

[31] PHOTOLUMINESCENCE EFFICIENCY STUDY OF WET CHEMICALLY ETCHED CDTE/CD(1-X)NG(X)TE WIRES
ILLING, M
BACHER, G
FORCHEL, A
LITZ, T
WAAG, A
LANDWEHR, G
APPLIED PHYSICS LETTERS, 1995, 66 (14) : 1815 - 1817
[32] Deep Centers at the Interface in In2x Ga2(1-x)Te3/InAs and In2Te3/InAs Heterostructures
Domashevskaya, E. P.
Mikhailyuk, E. A.
Prokopova, T. V.
Bezryadin, N. N.
SEMICONDUCTORS, 2016, 50 (03) : 309 - 313
[33] Microscopic Analysis of Interdiffusion and Void Formation in CdTe(1-x)Sex and CdTe Layers
Baines, Tom
Bowen, Leon
Mendis, Budhika G.
Major, Jonathan D.
ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (34) : 38070 - 38075
[34] SYSTEM (IN2TE3)X-(HG3TE3)1-X WITH 0.15 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 0.37
ANANINA, DB
BAKUMENKO, VL
BONAKOV, AK
GUSHKA, GG
KURBATOV, LN
INORGANIC MATERIALS, 1976, 12 (04) : 652 - 654
[35] Dielectric relaxation in polycrystalline thin films of In2Te3
Seyam, MAM
APPLIED SURFACE SCIENCE, 2001, 181 (1-2) : 128 - 138
[36] Ordering phenomena and demixing in the quasiternary system HSTe/CdTe/In2Te3
Weitze, D
Schmidtke, HM
Leute, V
JOURNAL OF ALLOYS AND COMPOUNDS, 1996, 239 (02) : 117 - 123
[37] CdTe polycrystalline films for X-ray digital imaging applications
Saucedo, E
Corregidor, V
Fornaro, L
Cuña, A
Dieguez, E
THIN SOLID FILMS, 2005, 471 (1-2) : 304 - 309
[38] Magnetic susceptibility of crystals of (InSb)(1-x)(CdTe)(x) solid solutions
Brodovoi, AV
Brodovi, VA
Byalyi, NG
Knorozok, LM
Kolesnichenko, VG
FIZIKA TVERDOGO TELA, 1996, 38 (06): : 1763 - 1766
[39] Synthesis and properties of semiconductor solid solutions (InSb)(1-x)(CdTe)(x)
Venger, E. F.
Knorozok, L. M.
Melnichuk, L. Yu.
Melnichuk, O. V.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2006, 9 (02) : 80 - 86
[40] Optical properties of crystals of the solid solutions (InSb)1-x(CdTe)x
Brodovoi, VA
Vyalyi, NG
Knorozok, LM
SEMICONDUCTORS, 1998, 32 (03) : 274 - 276

← 1 2 3 4 5 →