(CdTe)1-x(In2Te3)x pseudo-binary in polycrystalline CdTe-In films

被引：0
|
作者：
Castro-Rodríguez, R [1 ]
Hernández, MP
Zapata-Torres, M
Peña, JL
机构：
[1] IPN, CINVESTAV, Dept Appl Phys, Merida 97310, Yucatan, Mexico
[2] Univ La Havana, IMRE, La Habana 10400, Cuba
[3] IPN, ALTAMIRA, CICATA, Altamira 89600, Spain
来源：
THIN SOLID FILMS | 2000年 / 373卷 / 1-2期
关键词：
cadmium telluride; evaporation; lattice parameters; physical vapor; semiconductors; X-ray diffraction;
D O I：
10.1016/S0040-6090(00)01084-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (alpha -phase) in all films, together with the CdIn2Te4 (beta -phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：23 / 27
页数：5
相关论文
共 50 条
  • [1] Bandgap variation in semiconductor thin films of the solid solution (CdTe)1-x(In2Te3)x deposited by RF sputtering
    Melendez-Lira, Miguel
    Jimenez-Sandoval, Sergio
    Zapata-Torres, Martin
    Garcia-Sotelo, Alejandra
    Rodriguez, Eric Noe Hernandez
    Hernandez-Hernandez, Arturo
    MATERIALS RESEARCH EXPRESS, 2024, 11 (04)
  • [2] EFFECT OF THE PREPARATIVE CONDITIONS ON THE PHOTOELECTRIC PROPERTIES OF ZNSE/CDTE/(ZNTE)1-X(IN2TE3)X HETEROSTRUCTURES
    BELYAEV, AP
    TOSHKHODZHAEV, KA
    KALINKIN, IP
    INORGANIC MATERIALS, 1992, 28 (07) : 1257 - 1258
  • [3] THE PHASE DIAGRAM FOR THE PSEUDO-BINARY SYSTEM CDTE-IN2TE3
    THOMASSEN, L
    MASON, DR
    ROSE, GD
    SARACE, JC
    SCHMITT, GA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1127 - 1131
  • [4] PHASE DIAGRAM FOR THE PSEUDO-BINARY SYSTEM CDTE-IN2TE3
    THOMASSEN, L
    MASON, DR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : C206 - C206
  • [5] COMPOSITION DEPENDENCE OF ENERGY-GAP OF (CDTE)1-X(IN2TE3)X WITH XLESS-THAN0.02
    IWAMURA, Y
    MORIYAMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : 2435 - 2436
  • [6] Structural and electronic properties of (CdTe)1-x(In2Te3)x films grown by close-spaced vapor transport combined with free evaporation
    M. Zapata-Torres
    Y. P. Mascarenhas
    M. A. Santana-Aranda
    J. Luyo-Alvarado
    M. Melé-Lirandez
    A. Zapata-Navarro
    S. Jimé-Sandovalnez
    R. Castro-Rodriguez
    J. L. Peña
    Journal of Materials Research, 2000, 15 : 1811 - 1815
  • [7] Structural and electronic properties of (CdTe)1-x(In2Te3)x films grown by close-spaced vapor transport combined with free evaporation
    Zapata-Torres, M
    Mascarenhas, YP
    Santana-Aranda, MA
    Luyo-Alvarado, J
    Meléndez-Lira, M
    Zapata-Navarro, A
    Jiménez-Sandoval, S
    Castro-Rodriguez, R
    Peña, JL
    JOURNAL OF MATERIALS RESEARCH, 2000, 15 (08) : 1811 - 1815
  • [8] Microstructures and thermoelectric properties of (Bi2Te3)1-x/(CdTe)x composites
    Gau, Horng-Jyh
    Huang, Wu-Ruei
    Wu, Ching-Cherng
    Kuo, Yung-Kang
    Ho, Ching-Hwa
    SOLID COMPOUNDS OF TRANSITION ELEMENTS, 2011, 170 : 41 - 46
  • [9] OPTICAL-PROPERTIES OF (CDTE)1-X(CDSE)X AND (CDTE)1-X(CDS)X SYSTEMS
    TAI, H
    NAKASHIMA, S
    HORI, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : K115 - K119
  • [10] SEMICONDUCTING PROPERTIES OF PERITECTIC COMPOUNDS FROM THE PSEUDO-BINARY SYSTEM OF CDTE-IN2TE3
    OKANE, DF
    MASON, DR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1132 - 1136
12345