Indium tin oxide film characteristics after chemical mechanical polishing process with control of pad conditioning temperature

被引：1

作者：

Kim, Nam-Hoon ^{[2
]}

Choi, Gwon-Woo ^{[1
]}

Seo, Yong-Jin ^{[3
]}

Lee, Woo-Sun ^{[1
]}

机构：

[1] Chosun Univ, Dept Elect Engn, Kwangju 501759, South Korea

[2] Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea

[3] Daebul Univ, Dept Elect & Elect Engn, Chungnam 526702, South Korea

来源：

ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2 | 2007年 / 124-126卷

关键词：

indium tin oxide (ITO); chemical mechanical planarization (CMP); pad conditioning;

D O I：

10.4028/www.scientific.net/SSP.124-126.263

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 degrees C, while that after the general conditioning process at 30 degrees C was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.

引用

页码：263 / +

页数：2

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