Metal-organic vapor phase epitaxy growth and crystallographic study of vanadium-doped ZnSe

被引：3
|
作者：
Tahashi, Masahiro [1 ]
Goto, Hideo [1 ]
Ido, Toshiyuki [1 ]
机构：
[1] Chubu Univ, Dept Elect Engn, Aichi 4878501, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 05期
关键词：
D O I：
10.1002/pssb.200675107
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
As a new diluted magnetic semiconductor, vanadium-doped ZnSe is theoretically predicted to induce ferromagnetism above room temperature without carrier doping. Vanadium-doped ZnSe was epitaxially grown on (100) GaAs substrate by metal-organic vapor phase epitaxial method in an atmospheric pressure. The local structural of vanadium-doped ZnSe crystal showed vanadium atoms in ZnSe crystal were substituted by the Se-site and/or exist in interstitial sites so that ferromagnetism could not found in spite of vanadium doping. The influences of mol supply ratio of dimethyl Se to dimethyl Zn on crystallinity and growth rate were investigated in order to research the optimum vanadium-doping condition. (C) 2007 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1602 / 1606
页数：5
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