Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy

被引：1

作者：

Tahashi, Masahiro ^{[1
]}

Wu, Zunyi ^{[1
]}

Goto, Hideo ^{[1
]}

Ido, Toshiyuki ^{[1
]}

机构：

[1] Chubu Univ, Dept Elect Engn, Aichi 4878501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 12期

关键词：

MOVPE; ZnSe; vanadium;

D O I：

10.1143/JJAP.47.8726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vanadium-doped ZnSe was epitaxially grown on a (100) GaAs substrate by metalorganic vapor phase epitaxy under atmospheric pressure. The effects of the molar supply ratio of dimethylzinc to dimethylselenide on crystallinity were investigated to determine the optimum vanadium doping conditions. In the present study, as dopant sources of vanadium, vanadocene and triethoxyvanadyl were used. When triethoxyvanadyl was used as a dopant source, the crystal growth condition of vanadium-doped ZnSe changed from epitaxial growth to polycrystal growth at a molar supply ratio between 1.2 and 1.5. The magnetic property of vanadium-doped ZnSe fabricated at a molar supply ratio of 1.2 was measured using a superconducting quantum interface device at room temperature. [DOI: 10.1143/JJAP.47.8726]

引用

页码：8726 / 8729

页数：4

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