Epitaxial growth of vanadium-doped ZnSe by MOVPE

被引：6
|
作者：
Tahashi, M [1 ]
Ito, S [1 ]
Ido, T [1 ]
Goto, H [1 ]
机构：
[1] Chubu Univ, Dept Elect Engn, Kasugai, Aichi 4878501, Japan
来源：
MATERIALS TRANSACTIONS | 2005年 / 46卷 / 08期
关键词：
metal-organic vapor phase epitaxy; vanadium doping; zinc selenide;
D O I：
10.2320/matertrans.46.1908
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vanadium-doped ZnSe, which is theoretically predicted to induce ferromagnetism above room temperature without carrier doping, was epitaxially grown on (100)GaAs substrate by metal-organic vapor phase epitaxial method in an atmospheric pressure. Vanadium concentration in the film obtained under the condition where the substrate and the vanadocene temperatures are 500 and 140 degrees C, respectively, was 6.0 at% at maximum. The full width at half maximum (FWHM) of the peak diffracted from ZnSe(400) face increased with the increase of a vanadium concentration.
引用
收藏
页码：1908 / 1910
页数：3
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