Annealing-induced changes in optoelectronic properties of sputtered copper oxide films

被引:2
|
作者
Koshy, Aarju Mathew [1 ]
Sudha, A. [1 ,2 ]
Gollapalli, Prince [3 ]
Yadav, Satyesh Kumar [3 ,4 ]
Swaminathan, Parasuraman [1 ,2 ]
机构
[1] Indian Inst Technol IIT Madras, Dept Met & Mat Engn, Elect Mat & Thin Films Lab, Chennai, Tamil Nadu, India
[2] Indian Inst Technol IIT Madras, Ceram Technol Grp, Ctr Excellence Mat & Mfg Futurist Mobil, Chennai, Tamil Nadu, India
[3] Indian Inst Technol IIT Madras, Dept Met & Mat Engn, Mat Design Grp, Chennai, Tamil Nadu, India
[4] Indian Inst Technol IIT Madras, Ctr Atomist Modelling & Mat Design, Chennai 600036, Tamil Nadu, India
关键词
THIN-FILMS; OPTICAL-PROPERTIES; ELECTRODEPOSITED CU2O; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; DEPOSITION; CUO; GROWTH; SIZE;
D O I
10.1007/s10854-022-08288-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Copper (I) oxide thin films are deposited on quartz substrates by DC magnetron reactive sputtering. This study examines the effect of post-annealing on their optoelectronic properties in detail. The films are grown by sputtering from copper in an atmosphere of argon and oxygen. The substrate temperature is held at 200 degrees C, while annealing in ambient atmosphere has been carried out between 100 and 600 degrees C. X-ray diffraction analysis, Raman and UV-Vis spectroscopy, and four-probe measurements were used to characterise the films. XRD indicates that deposited Cu2O has a preferred orientation of (110). Post-annealing did not show any measurable conversion to copper (II) oxide until about 500 degrees C, and the process was incomplete even at 600 degrees C. The highest conductivity is observed in the sample post-annealed at 100 degrees C. These results are of substantial technological importance for using Cu2O for a variety of applications, including transparent solar cell fabrication.
引用
收藏
页码:13539 / 13546
页数:8
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