Power Management of Monolithic 3D Manycore Chips with Inter-tier Process Variations

被引:3
|
作者
Chatterjee, Anwesha [1 ]
Musavvir, Shouvik [1 ]
Kim, Ryan Gary [2 ]
Doppa, Janardhan Rao [1 ]
Pande, Partha Pratim [1 ]
机构
[1] Washington State Univ, 355 NE Spokane St, Pullman, WA 99163 USA
[2] Colorado State Univ, 1373 Campus Delivery, Ft Collins, CO 80524 USA
基金
美国国家科学基金会;
关键词
Monolithic; 3D; MIV; imitation learning; DVFI; inter-tier process variation; EDP; TECHNOLOGY; PERFORMANCE; INTEGRATION; NOC; ICS;
D O I
10.1145/3430765
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Voltage/frequency island (VFI)-based power management is a popular methodology for designing energy-efficient manycore architectures without incurring significant performance overhead. However, monolithic 3D (M3D) integration has emerged as an enabling technology to design high-performance and energy-efficient circuits and systems. The smaller dimension of vertical monolithic inter-tier vias (MIVs) lowers effective wirelength and allows high integration density. However, sequential fabrication of M3D layers introduces inter-tier process variations that affect the performance of transistors and interconnects in different layers. Therefore, VFI-based power management in M3D manycore systems requires the consideration of inter-tier process variation effects. In this work, we present the design of an imitation learning (IL)-enabled VFI-based power-management strategy that considers the inter-tier process-variation effects in M3D manycore chips. We demonstrate that the IL-based power-management strategy can be fine-tuned based on the M3D characteristics. Our policy generates suitable V/F levels based on the computation and communication characteristics of the system for both process-oblivious and process-aware configurations. We show that the proposed process-variation-aware IL-based VFI implementation for M3D manycore chips lowers the overall energy-delay-product (EDP) by up to 16.2% on average compared to an ideal M3D system with no M3D process variations.
引用
收藏
页数:19
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